H5AN4G8NBJR-RDC vs H5AN4G8NBJR-UHCR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-RDC disebabkan oleh SK hynix dan H5AN4G8NBJR-UHCR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-RDC | H5AN4G8NBJR-UHCR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 512M x 8 | 512M x 8 |
| Antaramuka | DDR4 (Double Data Rate IV) | DDR4 SSTL12 |
| Kemasan | 78-ball FBGA | 78-ball FBGA (11 mm x 7.5 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA solder-down) |
| Tegangan Pemberi Arus | [DATA_NEEDED: VDD supply voltage] | 1.2 V (VDD) |
| Kadar Data | [DATA_NEEDED: speed grade Mbps] | — |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate 1x/2x specification] |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| Status RoHS | Lead-Free & Halogen-Free (RoHS Compliant) | Compliant |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Speed Grade | — | UH (DDR4-2400 class, PC2400) |
| Internal Prefetch | — | 8n |
| Operating Case Temperature | — | -40C to +85C (industrial range) |
| Extended Temperature Range | — | Up to +95C case temperature (per datasheet conditions) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |
| Packaging Suffix | — | -R = Tape and Reel |
| Latensi CAS | — | [DATA_NEEDED: CL value for UH grade] |