H5AN4G8NBJR-VKC vs H5AN4G8NBJR-PBC Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-VKC dari SK hynix dan H5AN4G8NBJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-VKC | H5AN4G8NBJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Laju Data | 2666 Mbps (DDR4-2666) | — |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Paket | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | — |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Memory Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Tipe Antarmuka | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Bebas Halogen | — | Yes |