H5AN4G8NBJR-VKC vs H5AN4G8NBJR-PBC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-VKC sa pamamagitan ng SK hynix at H5AN4G8NBJR-PBC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-VKC | H5AN4G8NBJR-PBC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Rate ng Data | 2666 Mbps (DDR4-2666) | — |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Packhaging | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | — |
| Packaging | Tray | — |
| Katayuan ng Lifecycle | Active | — |
| Memory Density | — | 4 Gbit |
| Organisasyon | — | 512M x 8 |
| Uri ng Interface | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Wala sa Halogen | — | Yes |