H5AN4G8NBJR-VKI vs H5AN4G8NBJR-PBC Perbandingan

Perbandingan bersamaan detil H5AN4G8NBJR-VKI dari SK hynix dan H5AN4G8NBJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN4G8NBJR-VKI H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G8NBJR-VKI H5AN4G8NBJR-PBC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
Organisasi 512M x 8 512M x 8
Laju Data 2666 Mbps —
Tegangan Pemuat 1.2 V —
I/O Voltage 1.2 V (SSTL12) —
Paket FBGA-78 78-ball FBGA
Tipe Mounting Surface Mount Surface Mount
Speed Grade V (2666) PBC
Temperature Grade Industrial (I suffix) —
Architecture CMOS, 8n prefetch, bank groups —
Termination On-Die Termination (ODT) —
DBI Support Yes (Data Bus Inversion / DM) —
Latensi CAS [DATA_NEEDED: CAS Latency] —
Suhu Kerja [DATA_NEEDED: Operating Temperature] —
Refresh [DATA_NEEDED: Refresh specification] 8n prefetch, standard/auto refresh per DDR4 JEDEC
Status RoHS [DATA_NEEDED: RoHS Status] —
Memory Density — 4 Gbit
Tipe Antarmuka — Parallel, JEDEC DDR4
Supply Voltage VDD — 1.2 V
Supply Voltage VDDQ — 1.2 V
Clock Frequency — [DATA_NEEDED: Clock Frequency]
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Normal Operating Case Temperature — 0C to 85C
Extended Temperature Range — up to 95C case (with increased refresh)
Lead Free — Yes
Bebas Halogen — Yes

Spek dan Sumber

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