H5AN4G8NBJR-VKI vs H5AN4G8NBJR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKI disebabkan oleh SK hynix dan H5AN4G8NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-VKI | H5AN4G8NBJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Kadar Data | 2666 Mbps | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| I/O Voltage | 1.2 V (SSTL12) | — |
| Kemasan | FBGA-78 | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade | V (2666) | PBC |
| Temperature Grade | Industrial (I suffix) | — |
| Architecture | CMOS, 8n prefetch, bank groups | — |
| Termination | On-Die Termination (ODT) | — |
| DBI Support | Yes (Data Bus Inversion / DM) | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| Status RoHS | [DATA_NEEDED: RoHS Status] | — |
| Memory Density | — | 4 Gbit |
| Jenis Antaramuka | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |