H5AN8G6NAFR-UHC vs AS4C512M16D4B-62BCNTR Perbandingan
Perbandingan bersamaan detil H5AN8G6NAFR-UHC dari SK hynix dan AS4C512M16D4B-62BCNTR dari Alliance Memory. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | H5AN8G6NAFR-UHC | AS4C512M16D4B-62BCNTR |
|---|---|---|
| Merek | SK hynix | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemuat | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Laju Data | 2400 MT/s | 3200 MT/s |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Paket | 96-ball FBGA (TFBGA) | 96-FBGA (7.5x13 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | 0°C to 95°C |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Ukuran Memori | — | 8 Gbit (512M x 16) |
| Clock Frequency | — | 1600 MHz |
| Latensi CAS | — | 19 ns |
| Antarmuka | — | Parallel |
| JEDEC Standard | — | Compliant |
| Revision | — | Rev.B |
| Lead-Free | — | Yes |