H5AN8G6NAFR-UHC vs AS4C512M16D4B-62BCNTR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NAFR-UHC sa pamamagitan ng SK hynix at AS4C512M16D4B-62BCNTR sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN8G6NAFR-UHC | AS4C512M16D4B-62BCNTR |
|---|---|---|
| Brand | SK hynix | Alliance Memory |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasyon | 512M x 16 | 512M x 16 |
| Volte ng Pagbibigay | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Rate ng Data | 2400 MT/s | 3200 MT/s |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Packhaging | 96-ball FBGA (TFBGA) | 96-FBGA (7.5x13 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | 0°C to 95°C |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Laki ng Memory | — | 8 Gbit (512M x 16) |
| Clock Frequency | — | 1600 MHz |
| Latensya ng CAS | — | 19 ns |
| Interface | — | Parallel |
| JEDEC Standard | — | Compliant |
| Revision | — | Rev.B |
| Lead-Free | — | Yes |