IAUC120N06S5L015ATMA1 vs IAUC41N06S5N102ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC120N06S5L015ATMA1 dari Infineon dan IAUC41N06S5N102ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC120N06S5L015ATMA1 IAUC41N06S5N102ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W 42 W
Rentang Suhu Kerja -55C to +175C (Tj) -55C to +175C (junction)
Paket PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-33 (SSO8) Surface Mount
Tipe Mounting Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per Infineon automotive MOSFET family)
Gate-Source Voltage (VGS) max ±20 V —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] —
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 5 Power-Transistor
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 47 A (Tj)
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Channel Polarity — N-Channel (single)

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