IAUC120N06S5L015ATMA1 vs IAUC41N06S5N102ATMA1 比較

詳細並排比較 IAUC120N06S5L015ATMA1 由 Infineon 與 IAUC41N06S5N102ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 啟用中
Infineon
IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 ✓ 啟用中

規格比較

參數 IAUC120N06S5L015ATMA1 IAUC41N06S5N102ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology N-Channel MOSFET (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W 42 W
工作溫度範圍 -55C to +175C (Tj) -55C to +175C (junction)
封裝 PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-33 (SSO8) Surface Mount
安裝類型 Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per Infineon automotive MOSFET family)
Gate-Source Voltage (VGS) max ±20 V —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL level] —
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 5 Power-Transistor
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 47 A (Tj)
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Channel Polarity — N-Channel (single)

資料表與資源

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