IAUC64N08S5L075ATMA1 vs IAUZN04S7L030ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC64N08S5L075ATMA1 dari Infineon dan IAUZN04S7L030ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC64N08S5L075ATMA1 IAUZN04S7L030ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IAUC64N08S5L075ATMA1 —
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS™ 5 —
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at TC=25°C 64 A (TJ-limited) —
On-Resistance (RDS(on)) max at VGS=10V 7.5 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage absolute maximum] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C 75 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-33 (5x6 mm) PG-TSDSON-8-44 (S3O8) 3x3 mm²
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 (Automotive OptiMOS)
RoHS Compliance Compliant Compliant
Level MSL MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Jumlah Pin 8 —
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel

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