IAUC64N08S5L075ATMA1 vs IAUZN04S7L030ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC64N08S5L075ATMA1 disebabkan oleh Infineon dan IAUZN04S7L030ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC64N08S5L075ATMA1 IAUZN04S7L030ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IAUC64N08S5L075ATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS™ 5 —
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at TC=25°C 64 A (TJ-limited) —
On-Resistance (RDS(on)) max at VGS=10V 7.5 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage absolute maximum] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C 75 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-33 (5x6 mm) PG-TSDSON-8-44 (S3O8) 3x3 mm²
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 (Automotive OptiMOS)
RoHS Compliance Compliant Compliant
Aras MSL MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Bilangan Pin 8 —
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel

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