IAUC64N08S5L075ATMA1 vs IAUZN04S7L030ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC64N08S5L075ATMA1 sa pamamagitan ng Infineon at IAUZN04S7L030ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ NakahandaInfineon
IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon
IAUZN04S7L030ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC64N08S5L075ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TDSON-8-33 (5x6 mm) | PG-TSDSON-8-44 (S3O8) 3x3 mm² |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (Automotive OptiMOS) |
| RoHS Compliance | Compliant | Compliant |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Bilang ng Pins | 8 | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 60 A |
| Pulsed Drain Current (IDM, Tj) | — | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | — | 3.05 mΩ |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Operating Junction Temperature (Tj) | — | -55C to +175C |
| Technology Family | — | OptiMOS-7 |
| Channel Type | — | N-Channel |