IAUCN04S7N027GATMA1 vs IAUCN04S7L005ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N027GATMA1 dari Infineon dan IAUCN04S7L005ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N027GATMA1 IAUCN04S7L005ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Paket / Case PG-THSOG-4-1 (SSO4G 5x6) —
Tipe Mounting Surface Mount Surface Mount
Qualification Automotive —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55°C to +175°C (Tj)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL] [DATA_NEEDED: MSL rating]
Substrate Compatibility IMS substrates and legacy FR-4 —
Technology — OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25°C) — 430 A (Tj)
Continuous Drain Current (I_D, T_C=100°C) — [DATA_NEEDED: I_D at T_C=100°C]
On-Resistance R_DS(on) max — 0.52 mΩ
Power Dissipation (P_D) — 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) — [DATA_NEEDED: total Q_g in nC]
Paket — PG-TDSON-8-43 (TDSON-8)
Jumlah Pin — 8
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes

Spek dan Sumber

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