IAUCN08S7L013ATMA1 vs IAUCN10S5L280DATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7L013ATMA1 dari Infineon dan IAUCN10S5L280DATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7L013ATMA1 IAUCN10S5L280DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 5
Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on) max) 1.26 mΩ —
Arus Alir Berlanjut (TC=25°C) [DATA_NEEDED: continuous drain current at TC=25C] —
Continuous Drain Current (TJ) 293 A —
Power Dissipation (TC) 219 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage range] —
Gate Drive Voltage (typical) 10 V —
Rentang Suhu Kerja -55 °C to +175 °C -55C to +175C (junction)
Paket PG-TDSON-8-53 (TDSON-8 FL) PG-TDSON-8-61 (SSO8)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] 1
Qualification AEC-Q101 (automotive) —
Status RoHS Compliant Compliant
Packaging Tape & Reel (suffix ATMA1) —
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Automotive Qualified — Yes (AEC-Q101, IAU prefix)
Technology — OptiMOS 5 Trench MOSFET
Jumlah Pin — 8
Packing — Tape & Reel (T&R)

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