IAUCN08S7L013ATMA1 vs IAUCN10S5L280DATMA1 比較

詳細並排比較 IAUCN08S7L013ATMA1 由 Infineon 與 IAUCN10S5L280DATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 ✓ 啟用中
Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ 啟用中

規格比較

參數 IAUCN08S7L013ATMA1 IAUCN10S5L280DATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 5
Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on) max) 1.26 mΩ —
連續汲極電流 (TC=25°C) [DATA_NEEDED: continuous drain current at TC=25C] —
Continuous Drain Current (TJ) 293 A —
Power Dissipation (TC) 219 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage range] —
Gate Drive Voltage (typical) 10 V —
工作溫度範圍 -55 °C to +175 °C -55C to +175C (junction)
封裝 PG-TDSON-8-53 (TDSON-8 FL) PG-TDSON-8-61 (SSO8)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] 1
Qualification AEC-Q101 (automotive) —
RoHS 狀態 Compliant Compliant
Packaging Tape & Reel (suffix ATMA1) —
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Automotive Qualified — Yes (AEC-Q101, IAU prefix)
Technology — OptiMOS 5 Trench MOSFET
腳位數 — 8
Packing — Tape & Reel (T&R)

資料表與資源

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