IAUCN10S5L110TATMA1 vs IAUCN10S5L280DATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L110TATMA1 dari Infineon dan IAUCN10S5L280DATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L110TATMA1 IAUCN10S5L280DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level OptiMOS 5 Trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Paket PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TDSON-8-61 (SSO8)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260°C peak reflow) 1
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Product Family — OptiMOS 5
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Automotive Qualified — Yes (AEC-Q101, IAU prefix)
Rentang Suhu Kerja — -55C to +175C (junction)
Jumlah Pin — 8
Packing — Tape & Reel (T&R)

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