IAUCN10S5L110TATMA1 vs IAUCN10S5L280DATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L110TATMA1 disebabkan oleh Infineon dan IAUCN10S5L280DATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S5L110TATMA1 IAUCN10S5L280DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level OptiMOS 5 Trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TDSON-8-61 (SSO8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260°C peak reflow) 1
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Product Family — OptiMOS 5
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Automotive Qualified — Yes (AEC-Q101, IAU prefix)
Gambaran Suhu Operasi — -55C to +175C (junction)
Kiraan Pin — 8
Packing — Tape & Reel (T&R)

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