IAUCN10S7N074ATMA1 vs IAUCN04S7N037GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7N074ATMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7N074ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (Shielded-Gate Trench) Trench MOSFET, N-Channel
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 78 A (Tj) —
Power Dissipation (P<sub>D</sub>) 96 W (Tc) —
R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) 7.4 mΩ —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Rentang Suhu Kerja -55 °C to +175 °C [DATA_NEEDED: junction/ambient temperature limits]
Paket PG-TDSON-8-34 (TDSON EP, 5x6 mm) SSO4G 5x6 mm² (PG-THSOG-4-1)
Tipe Mounting Surface Mount Surface Mount (IMS substrate attach compatible)
Jumlah Pin 8 (with exposed pad) —
Level MSL MSL2 (1 year) [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 AEC-Q101
Status RoHS Compliant Compliant
Lead-Free Yes —
Application 48 V Automotive Systems —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

Spek dan Sumber

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