IAUCN10S7N074ATMA1 vs IAUCN04S7N037GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7N074ATMA1 disebabkan oleh Infineon dan IAUCN04S7N037GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S7N074ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (Shielded-Gate Trench) Trench MOSFET, N-Channel
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 78 A (Tj) —
Power Dissipation (P<sub>D</sub>) 96 W (Tc) —
R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) 7.4 mΩ —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Gambaran Suhu Operasi -55 °C to +175 °C [DATA_NEEDED: junction/ambient temperature limits]
Kemasan PG-TDSON-8-34 (TDSON EP, 5x6 mm) SSO4G 5x6 mm² (PG-THSOG-4-1)
Jenis Pemasangan Surface Mount Surface Mount (IMS substrate attach compatible)
Kiraan Pin 8 (with exposed pad) —
Aras MSL MSL2 (1 year) [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 AEC-Q101
Status RoHS Compliant Compliant
Lead-Free Yes —
Application 48 V Automotive Systems —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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