IAUT165N08S5N029ATMA2 vs ISC151N08NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IAUT165N08S5N029ATMA2 dari Infineon dan ISC151N08NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUT165N08S5N029ATMA2 ISC151N08NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IAUT165N08S5N029ATMA2 —
Product Family OptiMOS™ 5 —
Tipe Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 165 A —
Pulsed Drain Current (I<sub>DM</sub>) 660 A —
On-Resistance (R<sub>DS(on)</sub>) 2.9 mΩ (typical) —
Power Dissipation (P<sub>D</sub>, Tc) 167 W —
Avalanche Energy (E<sub>AS</sub>) 225 mJ —
Rentang Suhu Kerja -55 °C to +175 °C (T<sub>j</sub>) —
Paket / Case PG-HSOF-8-1 (8+Tab, Surface Mount) —
Tipe Mounting Surface Mount Surface Mount
MSL Rating MSL1 (up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 Qualified —
RoHS Compliance Green Product (RoHS compliant) —
Avalanche Tested 100% Avalanche Tested —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (TA=25°C) — 9.2 A
Arus Alir Berlanjut (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Paket — PG-TDSON-8 FL
Jumlah Pin — 8
Channel Mode — Enhancement
Suhu Kerja — -55 °C to +175 °C
Status RoHS — Compliant

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