IAUT165N08S5N029ATMA2 vs ISC151N08NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUT165N08S5N029ATMA2 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUT165N08S5N029ATMA2 ISC151N08NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IAUT165N08S5N029ATMA2 —
Product Family OptiMOS™ 5 —
Jenis Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 165 A —
Pulsed Drain Current (I<sub>DM</sub>) 660 A —
On-Resistance (R<sub>DS(on)</sub>) 2.9 mΩ (typical) —
Power Dissipation (P<sub>D</sub>, Tc) 167 W —
Avalanche Energy (E<sub>AS</sub>) 225 mJ —
Gambaran Suhu Operasi -55 °C to +175 °C (T<sub>j</sub>) —
Kemasan / Case PG-HSOF-8-1 (8+Tab, Surface Mount) —
Jenis Pemasangan Surface Mount Surface Mount
MSL Rating MSL1 (up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 Qualified —
RoHS Compliance Green Product (RoHS compliant) —
Avalanche Tested 100% Avalanche Tested —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (TA=25°C) — 9.2 A
Arus Kumpal Tetap (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Kemasan — PG-TDSON-8 FL
Bilangan Pin — 8
Channel Mode — Enhancement
Suhu Operasi — -55 °C to +175 °C
Status RoHS — Compliant

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