IAUTN04S7N004ATMA1 vs IAUCN04S7N037GATMA1 Perbandingan

Perbandingan bersamaan detil IAUTN04S7N004ATMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUTN04S7N004ATMA1 IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUTN04S7N004ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Technology N-Channel Trench MOSFET Trench MOSFET, N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C [DATA_NEEDED: ID at TC=25C] —
Continuous Drain Current (ID) at Tj 350 A 91 A
On-Resistance RDS(on) max 0.38 mΩ —
Power Dissipation (PD) at TC 255 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/range]
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Rentang Suhu Kerja -55C to +175C [DATA_NEEDED: junction/ambient temperature limits]
Paket PG-HSOF-8-8 (TOLL 10x12) SSO4G 5x6 mm² (PG-THSOG-4-1)
Tipe Mounting Surface Mount Surface Mount (IMS substrate attach compatible)
Qualification AEC-Q101 Automotive —
Status RoHS Compliant Compliant
Lead-Free Yes —
Polarity N-Channel —
Series — OptiMOS 7
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Automotive Qualification — AEC-Q101
Level MSL — [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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