IAUTN04S7N004ATMA1 vs IAUCN04S7N037GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUTN04S7N004ATMA1 disebabkan oleh Infineon dan IAUCN04S7N037GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUTN04S7N004ATMA1 IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUTN04S7N004ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Technology N-Channel Trench MOSFET Trench MOSFET, N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C [DATA_NEEDED: ID at TC=25C] —
Continuous Drain Current (ID) at Tj 350 A 91 A
On-Resistance RDS(on) max 0.38 mΩ —
Power Dissipation (PD) at TC 255 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/range]
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Gambaran Suhu Operasi -55C to +175C [DATA_NEEDED: junction/ambient temperature limits]
Kemasan PG-HSOF-8-8 (TOLL 10x12) SSO4G 5x6 mm² (PG-THSOG-4-1)
Jenis Pemasangan Surface Mount Surface Mount (IMS substrate attach compatible)
Qualification AEC-Q101 Automotive —
Status RoHS Compliant Compliant
Lead-Free Yes —
Polarity N-Channel —
Series — OptiMOS 7
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Automotive Qualification — AEC-Q101
Aras MSL — [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga