IDD04SG60CXTMA2 vs IDD06SG60CXTMA2 Perbandingan

Perbandingan bersamaan detil IDD04SG60CXTMA2 dari Infineon dan IDD06SG60CXTMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IDD04SG60CXTMA2 IDD06SG60CXTMA2
Merek Infineon Infineon
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC G3 thinQ Schottky Diode CoolSiC™ Schottky Diode G3 (thinQ™)
Device Type Silicon Carbide (SiC) Schottky Diode, Single —
Repetitive Peak Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF), TC=135 C 4 A —
Non-Repetitive Forward Surge Current (IFSM), tp=10ms [DATA_NEEDED: IFSM surge rating] —
Forward Voltage (VF) typ. at IF=4A, Tj=25 C 1.5 V —
Total Capacitive Charge (Qc) 4.5 nC [DATA_NEEDED: Qc value]
Total Capacitance (Ctot) at VR=400V [DATA_NEEDED: Ctot at 400 V] —
Reverse Current (IR) at VR=600V, Tj=25 C [DATA_NEEDED: IR max at 600 V] —
Rentang Suhu Hubung Kerja -55 C to +175 C —
Storage Temperature Range -55 C to +150 C —
Paket PG-TO252-3 (DPAK), 3-pin surface mount with tab —
Tipe Mounting Surface Mount —
Status RoHS Compliant Compliant
Lead-Free Finish Yes (Sn plating) —
MSL (Moisture Sensitivity Level) MSL 3 (per JEDEC J-STD-020) —
Bebas Halogen Yes —
Diode Configuration — Single
Technology — Silicon Carbide (SiC) Schottky
Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF) — 6 A
Repetitive Peak Forward Current (IFRM) — [DATA_NEEDED: IFRM]
Non-Repetitive Peak Forward Surge Current (IFSM) — 32 A
Forward Voltage (VF) at IF=6A — 2.1 V (typical)
Reverse Current (IR) Max — 500 nA
Suhu Hubung Kerja — -55 °C to +175 °C
Paket / Case — PG-TO252-3 (DPAK)
Gaya Mounting — Surface Mount (SMD/SMT)
Packaging — Cut Tape (Tape & Reel per factory standard)

Spek dan Sumber

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