IDD04SG60CXTMA2 vs IDD06SG60CXTMA2 比較

詳細並排比較 IDD04SG60CXTMA2 由 Infineon 與 IDD06SG60CXTMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IDD04SG60CXTMA2 IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon

IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon

IDD04SG60CXTMA2 ✓ 啟用中

規格比較

參數 IDD04SG60CXTMA2 IDD06SG60CXTMA2
品牌 Infineon Infineon
類別 Diodes Diodes
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC G3 thinQ Schottky Diode CoolSiC™ Schottky Diode G3 (thinQ™)
Device Type Silicon Carbide (SiC) Schottky Diode, Single —
Repetitive Peak Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF), TC=135 C 4 A —
Non-Repetitive Forward Surge Current (IFSM), tp=10ms [DATA_NEEDED: IFSM surge rating] —
Forward Voltage (VF) typ. at IF=4A, Tj=25 C 1.5 V —
Total Capacitive Charge (Qc) 4.5 nC [DATA_NEEDED: Qc value]
Total Capacitance (Ctot) at VR=400V [DATA_NEEDED: Ctot at 400 V] —
Reverse Current (IR) at VR=600V, Tj=25 C [DATA_NEEDED: IR max at 600 V] —
工作接面溫度範圍 -55 C to +175 C —
Storage Temperature Range -55 C to +150 C —
封裝 PG-TO252-3 (DPAK), 3-pin surface mount with tab —
安裝類型 Surface Mount —
RoHS 狀態 Compliant Compliant
Lead-Free Finish Yes (Sn plating) —
MSL (Moisture Sensitivity Level) MSL 3 (per JEDEC J-STD-020) —
無鹵素 Yes —
Diode Configuration — Single
Technology — Silicon Carbide (SiC) Schottky
Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF) — 6 A
Repetitive Peak Forward Current (IFRM) — [DATA_NEEDED: IFRM]
Non-Repetitive Peak Forward Surge Current (IFSM) — 32 A
Forward Voltage (VF) at IF=6A — 2.1 V (typical)
Reverse Current (IR) Max — 500 nA
工作接面溫度 — -55 °C to +175 °C
封裝 / 外殼 — PG-TO252-3 (DPAK)
安裝方式 — Surface Mount (SMD/SMT)
Packaging — Cut Tape (Tape & Reel per factory standard)

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