IDD04SG60CXTMA2 vs IDD06SG60CXTMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IDD04SG60CXTMA2 disebabkan oleh Infineon dan IDD06SG60CXTMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IDD04SG60CXTMA2 IDD06SG60CXTMA2
Merek Infineon Infineon
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC G3 thinQ Schottky Diode CoolSiC™ Schottky Diode G3 (thinQ™)
Device Type Silicon Carbide (SiC) Schottky Diode, Single —
Repetitive Peak Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF), TC=135 C 4 A —
Non-Repetitive Forward Surge Current (IFSM), tp=10ms [DATA_NEEDED: IFSM surge rating] —
Forward Voltage (VF) typ. at IF=4A, Tj=25 C 1.5 V —
Total Capacitive Charge (Qc) 4.5 nC [DATA_NEEDED: Qc value]
Total Capacitance (Ctot) at VR=400V [DATA_NEEDED: Ctot at 400 V] —
Reverse Current (IR) at VR=600V, Tj=25 C [DATA_NEEDED: IR max at 600 V] —
Gambaran Suhu Hubungan Operasi -55 C to +175 C —
Storage Temperature Range -55 C to +150 C —
Kemasan PG-TO252-3 (DPAK), 3-pin surface mount with tab —
Jenis Pemasangan Surface Mount —
Status RoHS Compliant Compliant
Lead-Free Finish Yes (Sn plating) —
MSL (Moisture Sensitivity Level) MSL 3 (per JEDEC J-STD-020) —
Boson Bebas Yes —
Diode Configuration — Single
Technology — Silicon Carbide (SiC) Schottky
Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF) — 6 A
Repetitive Peak Forward Current (IFRM) — [DATA_NEEDED: IFRM]
Non-Repetitive Peak Forward Surge Current (IFSM) — 32 A
Forward Voltage (VF) at IF=6A — 2.1 V (typical)
Reverse Current (IR) Max — 500 nA
Suhu Hubungan Operasi — -55 °C to +175 °C
Kemasan / Case — PG-TO252-3 (DPAK)
Gaya Pemasangan — Surface Mount (SMD/SMT)
Packaging — Cut Tape (Tape & Reel per factory standard)

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