IDD06SG60CXTMA2 vs IDD04SG60CXTMA2 Perbandingan

Perbandingan bersamaan detil IDD06SG60CXTMA2 dari Infineon dan IDD04SG60CXTMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IDD06SG60CXTMA2 IDD04SG60CXTMA2
Merek Infineon Infineon
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode G3 (thinQ™) CoolSiC G3 thinQ Schottky Diode
Diode Configuration Single —
Technology Silicon Carbide (SiC) Schottky —
Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF) 6 A —
Repetitive Peak Forward Current (IFRM) [DATA_NEEDED: IFRM] —
Non-Repetitive Peak Forward Surge Current (IFSM) 32 A —
Forward Voltage (VF) at IF=6A 2.1 V (typical) —
Reverse Current (IR) Max 500 nA —
Total Capacitive Charge (Qc) [DATA_NEEDED: Qc value] 4.5 nC
Suhu Hubung Kerja -55 °C to +175 °C —
Paket / Case PG-TO252-3 (DPAK) —
Gaya Mounting Surface Mount (SMD/SMT) —
Packaging Cut Tape (Tape & Reel per factory standard) —
Status RoHS Compliant Compliant
Device Type — Silicon Carbide (SiC) Schottky Diode, Single
Repetitive Peak Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF), TC=135 C — 4 A
Non-Repetitive Forward Surge Current (IFSM), tp=10ms — [DATA_NEEDED: IFSM surge rating]
Forward Voltage (VF) typ. at IF=4A, Tj=25 C — 1.5 V
Total Capacitance (Ctot) at VR=400V — [DATA_NEEDED: Ctot at 400 V]
Reverse Current (IR) at VR=600V, Tj=25 C — [DATA_NEEDED: IR max at 600 V]
Rentang Suhu Hubung Kerja — -55 C to +175 C
Storage Temperature Range — -55 C to +150 C
Paket — PG-TO252-3 (DPAK), 3-pin surface mount with tab
Tipe Mounting — Surface Mount
Lead-Free Finish — Yes (Sn plating)
MSL (Moisture Sensitivity Level) — MSL 3 (per JEDEC J-STD-020)
Bebas Halogen — Yes

Spek dan Sumber

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