IDD06SG60CXTMA2 vs IDD04SG60CXTMA2 比較

詳細並排比較 IDD06SG60CXTMA2 由 Infineon 與 IDD04SG60CXTMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IDD04SG60CXTMA2 IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon

IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon

IDD04SG60CXTMA2 ✓ 啟用中

規格比較

參數 IDD06SG60CXTMA2 IDD04SG60CXTMA2
品牌 Infineon Infineon
類別 Diodes Diodes
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode G3 (thinQ™) CoolSiC G3 thinQ Schottky Diode
Diode Configuration Single —
Technology Silicon Carbide (SiC) Schottky —
Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF) 6 A —
Repetitive Peak Forward Current (IFRM) [DATA_NEEDED: IFRM] —
Non-Repetitive Peak Forward Surge Current (IFSM) 32 A —
Forward Voltage (VF) at IF=6A 2.1 V (typical) —
Reverse Current (IR) Max 500 nA —
Total Capacitive Charge (Qc) [DATA_NEEDED: Qc value] 4.5 nC
工作接面溫度 -55 °C to +175 °C —
封裝 / 外殼 PG-TO252-3 (DPAK) —
安裝方式 Surface Mount (SMD/SMT) —
Packaging Cut Tape (Tape & Reel per factory standard) —
RoHS 狀態 Compliant Compliant
Device Type — Silicon Carbide (SiC) Schottky Diode, Single
Repetitive Peak Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF), TC=135 C — 4 A
Non-Repetitive Forward Surge Current (IFSM), tp=10ms — [DATA_NEEDED: IFSM surge rating]
Forward Voltage (VF) typ. at IF=4A, Tj=25 C — 1.5 V
Total Capacitance (Ctot) at VR=400V — [DATA_NEEDED: Ctot at 400 V]
Reverse Current (IR) at VR=600V, Tj=25 C — [DATA_NEEDED: IR max at 600 V]
工作接面溫度範圍 — -55 C to +175 C
Storage Temperature Range — -55 C to +150 C
封裝 — PG-TO252-3 (DPAK), 3-pin surface mount with tab
安裝類型 — Surface Mount
Lead-Free Finish — Yes (Sn plating)
MSL (Moisture Sensitivity Level) — MSL 3 (per JEDEC J-STD-020)
無鹵素 — Yes

資料表與資源

瀏覽所有產品 建立 BOM 索取報價