IDD06SG60CXTMA2 vs IDD04SG60CXTMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IDD06SG60CXTMA2 disebabkan oleh Infineon dan IDD04SG60CXTMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IDD06SG60CXTMA2 IDD04SG60CXTMA2
Merek Infineon Infineon
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode G3 (thinQ™) CoolSiC G3 thinQ Schottky Diode
Diode Configuration Single —
Technology Silicon Carbide (SiC) Schottky —
Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF) 6 A —
Repetitive Peak Forward Current (IFRM) [DATA_NEEDED: IFRM] —
Non-Repetitive Peak Forward Surge Current (IFSM) 32 A —
Forward Voltage (VF) at IF=6A 2.1 V (typical) —
Reverse Current (IR) Max 500 nA —
Total Capacitive Charge (Qc) [DATA_NEEDED: Qc value] 4.5 nC
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan / Case PG-TO252-3 (DPAK) —
Gaya Pemasangan Surface Mount (SMD/SMT) —
Packaging Cut Tape (Tape & Reel per factory standard) —
Status RoHS Compliant Compliant
Device Type — Silicon Carbide (SiC) Schottky Diode, Single
Repetitive Peak Reverse Voltage (VRRM) — 600 V
Continuous Forward Current (IF), TC=135 C — 4 A
Non-Repetitive Forward Surge Current (IFSM), tp=10ms — [DATA_NEEDED: IFSM surge rating]
Forward Voltage (VF) typ. at IF=4A, Tj=25 C — 1.5 V
Total Capacitance (Ctot) at VR=400V — [DATA_NEEDED: Ctot at 400 V]
Reverse Current (IR) at VR=600V, Tj=25 C — [DATA_NEEDED: IR max at 600 V]
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Storage Temperature Range — -55 C to +150 C
Kemasan — PG-TO252-3 (DPAK), 3-pin surface mount with tab
Jenis Pemasangan — Surface Mount
Lead-Free Finish — Yes (Sn plating)
MSL (Moisture Sensitivity Level) — MSL 3 (per JEDEC J-STD-020)
Boson Bebas — Yes

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