IGLR70R200D2SXUMA1 vs IAUS260N10S5N019TATMA1 Perbandingan
Perbandingan bersamaan detil IGLR70R200D2SXUMA1 dari Infineon dan IAUS260N10S5N019TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IGLR70R200D2SXUMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | — |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | OptiMOS 5 trench-gate |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 9.3 A | — |
| Power Dissipation (PD, Tc) | 34 W | — |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Rentang Suhu Kerja | -40 °C to +150 °C | -55 C to +175 C (Tj) |
| Paket | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| RoHS | Compliant | — |
| Product Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| Tipe Mounting | — | Surface Mount |
| Jumlah Pin | — | 16 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |
| Status RoHS | — | Compliant |