IGLR70R200D2SXUMA1 vs IAUS260N10S5N019TATMA1 比較
詳細並排比較 IGLR70R200D2SXUMA1 由 Infineon 與 IAUS260N10S5N019TATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ 啟用中規格比較
| 參數 | IGLR70R200D2SXUMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | — |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | OptiMOS 5 trench-gate |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 9.3 A | — |
| Power Dissipation (PD, Tc) | 34 W | — |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| 工作溫度範圍 | -40 °C to +150 °C | -55 C to +175 C (Tj) |
| 封裝 | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| RoHS | Compliant | — |
| Product Series | — | OptiMOS 5 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| 安裝類型 | — | Surface Mount |
| 腳位數 | — | 16 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |
| RoHS 狀態 | — | Compliant |