IPA60R190C6XKSA1 vs IPB60R190C6ATMA1 Perbandingan
Perbandingan bersamaan detil IPA60R190C6XKSA1 dari Infineon dan IPB60R190C6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPA60R190C6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS C6 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | 3.5 V (typ) |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C |
| Paket | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Through Hole | Surface Mount |
| Tab Isolation | Fully isolated (4 kV) | — |
| Status RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS C6 Superjunction N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Level MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |