IPA60R190C6XKSA1 vs IPB60R190C6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPA60R190C6XKSA1 sa pamamagitan ng Infineon at IPB60R190C6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPA60R190C6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS C6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | 3.5 V (typ) |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C |
| Packhaging | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Tab Isolation | Fully isolated (4 kV) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS C6 Superjunction N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Level ng MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |