IPA60R190C6XKSA1 vs IPB60R190C6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPA60R190C6XKSA1 disebabkan oleh Infineon dan IPB60R190C6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPA60R190C6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS C6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | 3.5 V (typ) |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C |
| Kemasan | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO263-3 (D2PAK) |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Tab Isolation | Fully isolated (4 kV) | — |
| Status RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS C6 Superjunction N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Aras MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |