IPB020NE7N3GATMA1 vs IPB107N20N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB020NE7N3GATMA1 dari Infineon dan IPB107N20N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB020NE7N3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | — |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 trench MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 200 V |
| Continuous Drain Current (ID) at Tc | 120 A | 88 A |
| Power Dissipation (PD) at Tc | 300 W | — |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| Paket | PG-TO263-3 (D²PAK, TO-263AB) | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | [DATA_NEEDED: Tj max and operating range] |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| Product Family | — | OptiMOS 3 |
| Tipe Transistor | — | N-Channel MOSFET |
| Maximum Power Dissipation (Pd) at Tc | — | 300 W |
| On-Resistance RDS(on) at VGS=10V | — | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Jumlah Pin | — | 3 (Drain, Source, Gate) + Tab |