IPB020NE7N3GATMA1 vs IPB107N20N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB020NE7N3GATMA1 disebabkan oleh Infineon dan IPB107N20N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB020NE7N3GATMA1 IPB107N20N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPB020NE7N3GATMA1 —
Technology OptiMOS 3 N-Channel Power MOSFET OptiMOS 3 trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) 75 V 200 V
Continuous Drain Current (ID) at Tc 120 A 88 A
Power Dissipation (PD) at Tc 300 W —
On-State Resistance RDS(on) 2.0 mΩ typical (per part number code) —
Kemasan PG-TO263-3 (D²PAK, TO-263AB) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single —
Gambaran Suhu Operasi -55C to +175C (junction) [DATA_NEEDED: Tj max and operating range]
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] —
Avalanche Rated Yes (per OptiMOS 3 family datasheet) —
Product Family — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Maximum Power Dissipation (Pd) at Tc — 300 W
On-Resistance RDS(on) at VGS=10V — 9.6 milliohm (typical, per third-party listing)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Kiraan Pin — 3 (Drain, Source, Gate) + Tab

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga