IPB027N10N3GATMA1 vs IPP100N12S305AKSA1 Perbandingan

Perbandingan bersamaan detil IPB027N10N3GATMA1 dari Infineon dan IPP100N12S305AKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB027N10N3GATMA1 IPP100N12S305AKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS trench
Drain-Source Voltage (VDS) 100 V 120 V
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
Rentang Suhu Kerja -55°C to +175°C (TJ) —
Paket PG-TO263-3 (D2PAK) TO-220 (PG-TO220-3-1)
Tipe Mounting Surface Mount Through Hole
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
Status RoHS Compliant —
Level MSL [DATA_NEEDED: moisture sensitivity level] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Arus Kedip Pengecor — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
Suhu Hubung Kerja — -55 °C to +175 °C
Jumlah Pin — 3
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

Spek dan Sumber

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