IPB027N10N3GATMA1 vs IPP100N12S305AKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB027N10N3GATMA1 disebabkan oleh Infineon dan IPP100N12S305AKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB027N10N3GATMA1 IPP100N12S305AKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS trench
Drain-Source Voltage (VDS) 100 V 120 V
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
Gambaran Suhu Operasi -55°C to +175°C (TJ) —
Kemasan PG-TO263-3 (D2PAK) TO-220 (PG-TO220-3-1)
Jenis Pemasangan Surface Mount Through Hole
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Arus Alir Gesa — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
Suhu Hubungan Operasi — -55 °C to +175 °C
Kiraan Pin — 3
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

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