IPB037N06N3GATMA1 vs IPB60R280P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPB037N06N3GATMA1 dari Infineon dan IPB60R280P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB037N06N3GATMA1 IPB60R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0,88
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPB037N06N3GATMA1 —
Technology OptiMOS 3 (N-channel, enhancement mode) Superjunction (SJ)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) at Tc 90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) Max 3.7 mOhm at VGS=10V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Power Dissipation (Pd) at Tc 188 W —
Rentang Suhu Kerja -55 C to +175 C (junction) -55 °C to +150 °C (T_j max)
Paket / Case PG-TO263-3 (D2PAK, surface mount) —
Tipe Mounting Surface Mount Surface Mount
Gate Charge (Qg) Typ [DATA_NEEDED: gate charge value] —
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) —
Drain Tab Connection Tab electrically tied to drain —
Product Family — CoolMOS P7 (600 V)
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Paket — PG-TO263-3 (D2PAK)
Jumlah Pin — 3 (2 + Tab)
Configuration — Single N-Channel
Lead-Free — Yes
Generation — 7th Gen CoolMOS (successor to P6)

Spek dan Sumber

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