IPB037N06N3GATMA1 vs IPB60R280P7ATMA1 比較
詳細並排比較 IPB037N06N3GATMA1 由 Infineon 與 IPB60R280P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ 啟用中
規格比較
| 參數 | IPB037N06N3GATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB037N06N3GATMA1 | — |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | Superjunction (SJ) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | — |
| Total Power Dissipation (Pd) at Tc | 188 W | — |
| 工作溫度範圍 | -55 C to +175 C (junction) | -55 °C to +150 °C (T_j max) |
| 封裝 / 外殼 | PG-TO263-3 (D2PAK, surface mount) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (unlimited) | — |
| Drain Tab Connection | Tab electrically tied to drain | — |
| Product Family | — | CoolMOS P7 (600 V) |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| 封裝 | — | PG-TO263-3 (D2PAK) |
| 腳位數 | — | 3 (2 + Tab) |
| Configuration | — | Single N-Channel |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |