IPB110P06LMATMA1 vs IPB100N04S4H2ATMA1 Perbandingan

Perbandingan bersamaan detil IPB110P06LMATMA1 dari Infineon dan IPB100N04S4H2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB110P06LMATMA1 IPB100N04S4H2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel, Enhancement Mode
Technology OptiMOS (trench MOSFET) OptiMOS-T2 (trench gate)
Drain-Source Voltage (VDS) -60 V 40 V
Continuous Drain Current (ID) at TC=25C -100 A 100 A
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
Rentang Suhu Kerja -55 C to +175 C (TJ) —
Paket / Case PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) —
Tipe Mounting Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
Status RoHS Compliant —
Lead-Free Yes —
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
RDS(on) at VGS=10V — 2.4 mΩ typical
Maximum Power Dissition (PD) at TC=25C — 115 W
Suhu Hubung Kerja — -55C to +175C
Storage Temperature — [DATA_NEEDED: storage temp range]
Paket — PG-TO263-3-2 (D2PAK-2) Surface Mount
Level MSL — MSL1 (up to 260C peak reflow)
Avalanche Energy (EAS) — 100% avalanche tested
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant (Green Product)

Spek dan Sumber

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