IPB110P06LMATMA1 vs IPB100N04S4H2ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB110P06LMATMA1 disebabkan oleh Infineon dan IPB100N04S4H2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB110P06LMATMA1 IPB100N04S4H2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel, Enhancement Mode
Technology OptiMOS (trench MOSFET) OptiMOS-T2 (trench gate)
Drain-Source Voltage (VDS) -60 V 40 V
Continuous Drain Current (ID) at TC=25C -100 A 100 A
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
Gambaran Suhu Operasi -55 C to +175 C (TJ) —
Kemasan / Case PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
Status RoHS Compliant —
Lead-Free Yes —
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
RDS(on) at VGS=10V — 2.4 mΩ typical
Maximum Power Dissition (PD) at TC=25C — 115 W
Suhu Hubungan Operasi — -55C to +175C
Storage Temperature — [DATA_NEEDED: storage temp range]
Kemasan — PG-TO263-3-2 (D2PAK-2) Surface Mount
Aras MSL — MSL1 (up to 260C peak reflow)
Avalanche Energy (EAS) — 100% avalanche tested
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant (Green Product)

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