IPB120P04P4L03ATMA2 vs IPB70N10S3L12ATMA1 Perbandingan

Perbandingan bersamaan detil IPB120P04P4L03ATMA2 dari Infineon dan IPB70N10S3L12ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB120P04P4L03ATMA2 IPB70N10S3L12ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Suhu Hubung Kerja -55C to +175C -55 °C to +175 °C
Paket PG-TO263-3-2 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Jumlah Pin 3 (Gate, Drain, Source) —
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant (per Infineon product page) —
Manufacturer — Infineon Technologies
Series — OptiMOS (IPB70N10)
Tipe Transistor — N-Channel MOSFET, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 70 A
Peak Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10V — 11.8 mΩ
Power Dissipation (PD) at TC=25°C — 125 W
Paket / Case — PG-TO263-3-2 (D2PAK, 2 Leads + Tab)
Automotive Qualification — AEC-Q101 Qualified
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Avalanche Tested — 100 % Avalanche Tested
Bebas Halogen — Yes

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