IPB200N25N3GATMA1 vs IPB072N15N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPB200N25N3GATMA1 dari Infineon dan IPB072N15N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB200N25N3GATMA1 IPB072N15N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 3 —
Tipe Transistor N-Channel MOSFET —
Paket PG-TO263-3 (D2PAK) PG-TO263-3-2 (D2PAK-2, 3 pins + tab)
Tipe Mounting Surface Mount Surface Mount
Drain-Source Voltage (V_DS) 250 V 150 V
Continuous Drain Current (I_D) at T_C 64 A —
Power Dissipation (P_D) at T_C 300 W —
R_DS(on) max at V_GS=10V 20 mOhm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/max] [DATA_NEEDED: V_GS(th) typical]
Technology OptiMOS 3 (Trench) OptiMOS 3 (trench MOSFET)
Gate Charge (Q_g) [DATA_NEEDED: Q_g typical] —
Rentang Suhu Kerja -55C to +175C -55 C to +175 C
Status RoHS Compliant Compliant
Bebas Halogen Yes (per Infineon OptiMOS family datasheet) —
Level MSL 1 (per JEDEC J-STD-020) —
Jumlah Pin 3 (2+tab) —
FET Type — N-Channel
Continuous Drain Current (I_D, Tc=25C) — 100 A
Continuous Drain Current (I_D, Tc=100C) — [DATA_NEEDED: I_D at Tc=100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed I_DM]
Maximum Power Dissipation (P_D, Tc=25C) — 300 W
R_DS(on) typical at VGS=10V — 7.2 mOhm
R_DS(on) max at VGS=10V — [DATA_NEEDED: max R_DS(on) at VGS=10V]
Gate-Source Voltage (V_GS) max — +/-20 V
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical at VGS=10V]
Avalanche Energy Rated — Yes (single-pulse E_AS)
Intrinsic Body Diode — Yes (low Q_rr, sync-rectifier capable)
Manufacturer Ordering Code Suffix — GATMA1 (tape and reel, 1000 pcs)

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