IPB200N25N3GATMA1 vs IPB072N15N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB200N25N3GATMA1 sa pamamagitan ng Infineon at IPB072N15N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB200N25N3GATMA1 - 250V 64A OptiMOS 3 N-Ch MOSFET | Infineon
IPB200N25N3GATMA1 ✓ NakahandaInfineon
IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
IPB072N15N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB200N25N3GATMA1 | IPB072N15N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | 150 V |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | [DATA_NEEDED: V_GS(th) typical] |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 (trench MOSFET) |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 C to +175 C |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes (per Infineon OptiMOS family datasheet) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Bilang ng Pin | 3 (2+tab) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (I_D, Tc=25C) | — | 100 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed I_DM] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 300 W |
| R_DS(on) typical at VGS=10V | — | 7.2 mOhm |
| R_DS(on) max at VGS=10V | — | [DATA_NEEDED: max R_DS(on) at VGS=10V] |
| Gate-Source Voltage (V_GS) max | — | +/-20 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at VGS=10V] |
| Avalanche Energy Rated | — | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | — | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | — | GATMA1 (tape and reel, 1000 pcs) |