IPB60R040CFD7ATMA1 vs IPD80R280P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPB60R040CFD7ATMA1 dari Infineon dan IPD80R280P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPB60R040CFD7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Dissipasi Listrik (TC=25°C) | 227 W | — |
| Rentang Suhu Kerja | -55°C to +150°C | — |
| Paket | PG-TO263-3-2 (D2PAK) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 800 V |
| Continuous Drain Current (I_D, Tc) | — | 17 A |
| R_DS(on) max at V_GS=10V | — | 280 mOhm |
| Power Dissipation (P_D, Tc) | — | 101 W |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Suhu Hubung Kerja | — | -55C to +150C |
| ESD Protection | — | Integrated (per datasheet) |