IPB60R040CFD7ATMA1 vs IPD80R280P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon at IPD80R280P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ Nakahanda
Infineon
IPD80R280P7ATMA1 IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB60R040CFD7ATMA1 IPD80R280P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $5.19 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 CoolMOS P7
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (CoolMOS P7)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Pwersang Pinahihigpit (TC=25°C) 227 W —
Hanay ng Temperature na Operasyon -55°C to +150°C —
Packhaging PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Level ng MSL 1 [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 800 V
Continuous Drain Current (I_D, Tc) — 17 A
R_DS(on) max at V_GS=10V — 280 mOhm
Power Dissipation (P_D, Tc) — 101 W
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Temperature ng Junction na Operasyon — -55C to +150C
ESD Protection — Integrated (per datasheet)

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