IPB60R040CFD7ATMA1 vs IPD80R280P7ATMA1 比較

詳細並排比較 IPB60R040CFD7ATMA1 由 Infineon 與 IPD80R280P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中
Infineon
IPD80R280P7ATMA1 IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 ✓ 啟用中

規格比較

參數 IPB60R040CFD7ATMA1 IPD80R280P7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 In Stock —
單價 (USD) $5.19 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 CoolMOS P7
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (CoolMOS P7)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功率耗散 (TC=25°C) 227 W —
工作溫度範圍 -55°C to +150°C —
封裝 PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK)
安裝類型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等級 1 [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 800 V
Continuous Drain Current (I_D, Tc) — 17 A
R_DS(on) max at V_GS=10V — 280 mOhm
Power Dissipation (P_D, Tc) — 101 W
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
工作接面溫度 — -55C to +150C
ESD Protection — Integrated (per datasheet)

資料表與資源

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