IPB60R280P7ATMA1 vs IPB037N06N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPB60R280P7ATMA1 dari Infineon dan IPB037N06N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB60R280P7ATMA1 IPB037N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0,88 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 (600 V) —
Tipe Transistor N-Channel MOSFET —
Technology Superjunction (SJ) OptiMOS 3 (N-channel, enhancement mode)
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Paket PG-TO263-3 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Rentang Suhu Kerja -55 °C to +150 °C (T_j max) -55 C to +175 C (junction)
Configuration Single N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes —
Generation 7th Gen CoolMOS (successor to P6) —
Part Number — IPB037N06N3GATMA1
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) at Tc — 90 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) Max — 3.7 mOhm at VGS=10V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Power Dissipation (Pd) at Tc — 188 W
Paket / Case — PG-TO263-3 (D2PAK, surface mount)
Gate Charge (Qg) Typ — [DATA_NEEDED: gate charge value]
Level MSL — 1 (unlimited)
Drain Tab Connection — Tab electrically tied to drain

Spek dan Sumber

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