IPB60R280P7ATMA1 vs IPB037N06N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R280P7ATMA1 disebabkan oleh Infineon dan IPB037N06N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R280P7ATMA1 IPB037N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0.88 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 (600 V) —
Jenis Transistor N-Channel MOSFET —
Technology Superjunction (SJ) OptiMOS 3 (N-channel, enhancement mode)
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Kemasan PG-TO263-3 (D2PAK) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (2 + Tab) —
Gambaran Suhu Operasi -55 °C to +150 °C (T_j max) -55 C to +175 C (junction)
Configuration Single N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes —
Generation 7th Gen CoolMOS (successor to P6) —
Part Number — IPB037N06N3GATMA1
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) at Tc — 90 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) Max — 3.7 mOhm at VGS=10V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Power Dissipation (Pd) at Tc — 188 W
Kemasan / Case — PG-TO263-3 (D2PAK, surface mount)
Gate Charge (Qg) Typ — [DATA_NEEDED: gate charge value]
Aras MSL — 1 (unlimited)
Drain Tab Connection — Tab electrically tied to drain

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